2SC6060 2008-11-07 1 toshiba transistor silicon npn epitaxial type 2SC6060 power amplifier applications driver stage amplifier applications ? high-transition frequency: f t = 100 mhz (typ.) absolute maximum ratings (tc = 25c) characteristic symbol rating unit collector-base voltage v cbo 230 v collector-emitter voltage v ceo 230 v emitter-base voltage v ebo 5 v dc i c 1.0 a collector current pulse i cp 2.0 a base current i b 100 ma ta = 25c 2 w collector power dissipation tc = 25c p c 20 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability signific antly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). unit: mm jedec D jeita sc-67 toshiba 2-10u1a weight: 1.7 g (typ.) 1: base 2: collector 3: emitter free datasheet http:///
2SC6060 2008-11-07 2 electrical characteristics (tc = 25c) characteristic symbol test conditions min typ. max unit collector cut-off current i cbo v cb = 230 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v eb = 5 v, i c = 0 ? ? 100 na collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 230 ? ? v dc current gain h fe v ce = 5 v, i c = 0.1 a 100 ? 320 ? collector-emitter saturation voltage v ce (sat) i c = 500 ma, i b = 50 ma ? ? 0.5 v base-emitter voltage v be v ce = 5 v, i c = 500 ma ? ? 1.0 v transition frequency f t v ce = 10 v, i c = 100 ma ? 100 ? mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1mhz ? 14.5 ? pf marking lot no. a line indicates lead (pb)-free finish. c6060 part no. (or abbreviation code) free datasheet http:///
2SC6060 2008-11-07 3 collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) base-emitter voltage v be (v) i c ? v be v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) common emitter v ce = 5 v single non-repetitive pulse 0 0 1 0.5 tc = 100c ? 25 25 0.2 0.4 0.6 0.8 1.2 1 1.4 10 10 0.001 0.01 0.1 1 1000 100 collector current i c (a) transition frequency f t (mhz) f t ? i c common emitter ta =25 v ce =10 v 1000 0 0 1 0.2 0.4 0.6 10 0.8 2 4 6 8 0.01 0.001 1 0.1 1 0.001 1 0.01 0.1 10 100 2 1.5 common emitter tc =2 5 single non-repetitive pulse i b = 1 ma 8 ma 20 ma 10 ma 6 ma 4 ma 2 ma common emitter v ce = 5 v single non-repetitive pulse tc = 100c ? 25c 25c common emitter =10 single non-repetitive pulse 10 tc = 100c 0.01 0.1 1 ? 25c 25c 0 0 40 80 120 160 4 8 16 20 24 collector power dissipation p c (w) ambient temperature ta (c) p c ? ta 12 tc=ta infinite heat sink no heat sink free datasheet http:///
2SC6060 2008-11-07 4 collector current i c (a) safe operating area collector ? emitter voltage v ce (v) 1 10 0.01 i c max ( continuous ) i c max (pulsed) * dc operation tc = 25c 10 ms* 1 ms* 100 ms* *: single non-repetitive pulse tc = 25 c curves must be derated linearly with increase in temperature. v ceo max 1 1000 10 100 0.1 free datasheet http:///
2SC6060 2008-11-07 5 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their i nherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within s pecified operating ranges as set forth in the most recent toshiba products specific ations. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traf fic signal instruments, comb ustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshi ba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. free datasheet http:///
|
